Effect of annealing atmosphere on the electrical properties of nickel oxide/zinc oxide p-n junction grown by sol-gel technique
Identifieur interne : 000116 ( Main/Exploration ); précédent : 000115; suivant : 000117Effect of annealing atmosphere on the electrical properties of nickel oxide/zinc oxide p-n junction grown by sol-gel technique
Auteurs : M. Jlassi [Tunisie] ; I. Sta [Tunisie] ; M. Hajji [Tunisie] ; B. Ben Haoua [Algérie] ; H. Ezzaouia [Tunisie]Source :
- Materials science in semiconductor processing [ 1369-8001 ] ; 2014.
Descripteurs français
- Pascal (Inist)
- Atmosphère contrôlée, Propriété électrique, Caractéristique électrique, Jonction p n, Procédé sol gel, Revêtement centrifugation, Dépôt centrifugation, Microstructure, Morphologie surface, Structure surface, Diffraction RX, Microscopie force atomique, Caractéristique optique, Propriété optique, Spectre UV visible, Courant photoélectrique, Photoconductivité, Source tension, Appareillage, Instrumentation, Polycristal, Oxyde de nickel, Oxyde de zinc, Couche mince, Verre, Hétérostructure, Electronique puissance, 8105K, 6865, 6837P, 7867, ZnO, 7840R.
- Wicri :
- topic : Verre.
English descriptors
- KwdEn :
- Atomic force microscopy, Controlled atmosphere, Electrical characteristic, Electrical properties, Glass, Heterostructures, Instrumentation, Instruments, Microstructure, Nickel oxide, Optical characteristic, Optical properties, Photoconductivity, Photoelectric current, Polycrystal, Power electronics, Sol gel process, Spin-on coating, Spin-on coatings, Surface morphology, Surface structure, Thin film, Ultraviolet visible spectrum, Voltage source, X ray diffraction, Zinc oxide, p n junction.
Abstract
Zinc oxide (ZnO) and nickel oxide (NiO) thin films were prepared on glass substrates by a sol-gel method. Spin coating was used to fabricate a p-NiO/n-ZnO junction. The influence of the post annealing atmosphere (air or nitrogen) on the microstructure and surface morphology of NiO and ZnO thin films and the p-NiO/n-ZnO junction are examined. The structural properties are characterized by X-ray diffraction (XRD) and the surface morphology of the thin films and the p-n junction are investigated by atomic force microscopy (AFM). Optical properties are investigated by UV-visible spectroscopy and the electrical properties, such as I-V photocurrent, are characterized by a voltage source meter instrument. XRD patterns show that the films are polycrystalline with preferred orientation in the (002) direction for the ZnO films and the (200) direction for the NiO films. The AFM results indicate that the morphology of the ZnO and NiO films and the p-NiO/n-ZnO junction are mainly influenced by the annealing atmosphere. All films have a high optical transmittance of about 80% in the visible region and a sharp absorption edge. The optical band gaps of the two materials change with the annealing atmosphere (air or nitrogen). The p-NiO/n-ZnO heterojunction device has an average transmittance of over 80% in the visible region, which lies between the transmittance of the ZnO and NiO films separately. The ideality factor, barrier height, and series resistance of the heterojunction treated in different annealing atmospheres are determined by using conventional forward bias I-V characteristics and also Norde's and Cheung's methods.
Affiliations:
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Jlassi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l'Energie, Technopole de Borj-Cédria, BP 95</s1><s2>2050 Hammam-Lif</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>2050 Hammam-Lif</wicri:noRegion></affiliation></author><author><name sortKey="Sta, I" sort="Sta, I" uniqKey="Sta I" first="I." last="Sta">I. Sta</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l'Energie, Technopole de Borj-Cédria, BP 95</s1><s2>2050 Hammam-Lif</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>2050 Hammam-Lif</wicri:noRegion></affiliation></author><author><name sortKey="Hajji, M" sort="Hajji, M" uniqKey="Hajji M" first="M." last="Hajji">M. Hajji</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l'Energie, Technopole de Borj-Cédria, BP 95</s1><s2>2050 Hammam-Lif</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>2050 Hammam-Lif</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ecole Nationale d'Electronique et des Communications de Sfax, Technopole de Sfax, BP, 1163, CP 3021</s1><s3>TUN</s3><sZ>3 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>Ecole Nationale d'Electronique et des Communications de Sfax, Technopole de Sfax, BP, 1163, CP 3021</wicri:noRegion></affiliation></author><author><name sortKey="Ben Haoua, B" sort="Ben Haoua, B" uniqKey="Ben Haoua B" first="B." last="Ben Haoua">B. Ben Haoua</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Laboratoire VTRS, faculté des Sciences et Technologie, Université d'El oued BP 789</s1><s2>39000 El oued</s2><s3>DZA</s3><sZ>4 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>39000 El oued</wicri:noRegion></affiliation></author><author><name sortKey="Ezzaouia, H" sort="Ezzaouia, H" uniqKey="Ezzaouia H" first="H." last="Ezzaouia">H. Ezzaouia</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l'Energie, Technopole de Borj-Cédria, BP 95</s1><s2>2050 Hammam-Lif</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>2050 Hammam-Lif</wicri:noRegion></affiliation></author></analytic><series><title level="j" type="main">Materials science in semiconductor processing</title><title level="j" type="abbreviated">Mater. sci. semicond. process.</title><idno type="ISSN">1369-8001</idno><imprint><date when="2014">2014</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Materials science in semiconductor processing</title><title level="j" type="abbreviated">Mater. sci. semicond. process.</title><idno type="ISSN">1369-8001</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Controlled atmosphere</term><term>Electrical characteristic</term><term>Electrical properties</term><term>Glass</term><term>Heterostructures</term><term>Instrumentation</term><term>Instruments</term><term>Microstructure</term><term>Nickel oxide</term><term>Optical characteristic</term><term>Optical properties</term><term>Photoconductivity</term><term>Photoelectric current</term><term>Polycrystal</term><term>Power electronics</term><term>Sol gel process</term><term>Spin-on coating</term><term>Spin-on coatings</term><term>Surface morphology</term><term>Surface structure</term><term>Thin film</term><term>Ultraviolet visible spectrum</term><term>Voltage source</term><term>X ray diffraction</term><term>Zinc oxide</term><term>p n junction</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Atmosphère contrôlée</term><term>Propriété électrique</term><term>Caractéristique électrique</term><term>Jonction p n</term><term>Procédé sol gel</term><term>Revêtement centrifugation</term><term>Dépôt centrifugation</term><term>Microstructure</term><term>Morphologie surface</term><term>Structure surface</term><term>Diffraction RX</term><term>Microscopie force atomique</term><term>Caractéristique optique</term><term>Propriété optique</term><term>Spectre UV visible</term><term>Courant photoélectrique</term><term>Photoconductivité</term><term>Source tension</term><term>Appareillage</term><term>Instrumentation</term><term>Polycristal</term><term>Oxyde de nickel</term><term>Oxyde de zinc</term><term>Couche mince</term><term>Verre</term><term>Hétérostructure</term><term>Electronique puissance</term><term>8105K</term><term>6865</term><term>6837P</term><term>7867</term><term>ZnO</term><term>7840R</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Verre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Zinc oxide (ZnO) and nickel oxide (NiO) thin films were prepared on glass substrates by a sol-gel method. Spin coating was used to fabricate a p-NiO/n-ZnO junction. The influence of the post annealing atmosphere (air or nitrogen) on the microstructure and surface morphology of NiO and ZnO thin films and the p-NiO/n-ZnO junction are examined. The structural properties are characterized by X-ray diffraction (XRD) and the surface morphology of the thin films and the p-n junction are investigated by atomic force microscopy (AFM). Optical properties are investigated by UV-visible spectroscopy and the electrical properties, such as I-V photocurrent, are characterized by a voltage source meter instrument. XRD patterns show that the films are polycrystalline with preferred orientation in the (002) direction for the ZnO films and the (200) direction for the NiO films. The AFM results indicate that the morphology of the ZnO and NiO films and the p-NiO/n-ZnO junction are mainly influenced by the annealing atmosphere. All films have a high optical transmittance of about 80% in the visible region and a sharp absorption edge. The optical band gaps of the two materials change with the annealing atmosphere (air or nitrogen). The p-NiO/n-ZnO heterojunction device has an average transmittance of over 80% in the visible region, which lies between the transmittance of the ZnO and NiO films separately. The ideality factor, barrier height, and series resistance of the heterojunction treated in different annealing atmospheres are determined by using conventional forward bias I-V characteristics and also Norde's and Cheung's methods.</div></front></TEI><affiliations><list><country><li>Algérie</li><li>Tunisie</li></country></list><tree><country name="Tunisie"><noRegion><name sortKey="Jlassi, M" sort="Jlassi, M" uniqKey="Jlassi M" first="M." last="Jlassi">M. Jlassi</name></noRegion><name sortKey="Ezzaouia, H" sort="Ezzaouia, H" uniqKey="Ezzaouia H" first="H." last="Ezzaouia">H. Ezzaouia</name><name sortKey="Hajji, M" sort="Hajji, M" uniqKey="Hajji M" first="M." last="Hajji">M. Hajji</name><name sortKey="Hajji, M" sort="Hajji, M" uniqKey="Hajji M" first="M." last="Hajji">M. Hajji</name><name sortKey="Sta, I" sort="Sta, I" uniqKey="Sta I" first="I." last="Sta">I. Sta</name></country><country name="Algérie"><noRegion><name sortKey="Ben Haoua, B" sort="Ben Haoua, B" uniqKey="Ben Haoua B" first="B." last="Ben Haoua">B. Ben Haoua</name></noRegion></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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